姓名：张德林
职称：教授/博士生导师
Email：zhangdelin@tiangong.edu.cn
职务及人才称号：
天津市青年人才，天津工业大学“天工杰青”入选者。
专业：自旋电子学材料与器件
研究方向一：自旋电子材料和器件
研究方向二：拓扑量子材料
研究方向三：半导体材料和器件
博士生招生专业：自旋电子学材料与器件；拓扑量子材料与器件；半导体材料与器件
硕士生招生专业：自旋电子学材料与器件；拓扑量子材料与器件；半导体材料与器件
学习经历：
2012年06月毕业于北京科技大学材料物理与化学专业，获博士学位
2008年06月毕业于北京有色金属研究总院材料科学与工程专业，获硕士学位
2004年06月毕业于中国矿业大学（北京）环境工程专业，获学士学位
工作经历：
2022年01月-今，天津工业大学电子与信息工程学院，教授
2021年07月-2021年12月，天津工业大学电子与信息工程学院，特聘研究员
2018年09月-2021年06月，美国明尼苏达大学，研究员
2013年12月-2018年08月，美国明尼苏达大学，博士后
2012年08月-2013年08月，德国马普所固体物理与化学研究所，博士后
讲授主要课程：
自旋电子学材料与器件，信息功能材料与器件
近年代表性科研成果：
项目情况：
1. 联合大学微电子计划（JUMP），高效节能集成纳米技术应用和系统驱动中心（ASCENT），课题“电压控制磁性各向异性存储器件”和“自旋轨道存储器件”，子课题参与人。
2. 新型计算基础需求研究中心（FRANC），课题“超快翻转合成反铁磁垂直磁性隧道结存储器件”，子课题参与人。
3. 先进半导体技术研究“星网”计划（STARNet），自旋电子材料界面和新型架构研究中心（C-SPIN），课题 “垂直磁性材料存储器件”和“自旋电子器件和互连”，子课题参与。
4. 强自旋轨道耦合反铁磁材料物态调控及原型器件，国家重点研发计划，直接经费2582万，起止年月2022年12月至2027年11月，课题参与人。
5. 超低功耗自旋轨道矩调控与器件关键技术研究，国家重点研发计划，直接经费2500万，起止年月2023年05月至2028年04月，课题参与人。
6. 磁控溅射制备的拓扑材料自旋轨道转矩垂直磁性隧道结性能的研究，国家自然基金委面上项目，直接经费54万，起止年月2023年1月至2026年12月，项目负责人。
7. 可全向拉伸的弹性自旋阀磁传感材料与器件研究，国家自然科学基金联合基金重点项目，直接经费86.8万，起止年月2024年1月至2027年12月，课题负责人。
专利情况：
申请或授权美国发明专利7项，转让3项；中国发明专利3项。
1. Jian-Ping Wang, andDelin Zhang. Discovery of the conductive topological insulator Pt3Sn and magnetic Weyl semimetal Pt3SnxFe1-xforspintronic applications. U.S. Patent, 2021.
2. Jian-Ping Wang, Thomas Peterson, Anthony Hurben, and Delin Zhang, Manipulation of voltage controlled magnetic anisotropy engineered through hole-doped layers. U.S. Patent, 2021.
3. Jian-Ping Wang, Delin Zhang, and Protyush Sahu. Electric field switchable magnetic devices. U.S. Patent, 11,183,227, B1（2021）（美国授权专利）
4. Jian-Ping Wang, Md Mehedi, Yanfeng Jiang, Bin Ma, Delin Zhang, Fan Zhang, Jinming Liu, Iron-rich permanent magnet, U. S. Patent, 20200027654 (2019) （美国授权专利）
5. Jian-Ping Wang, Delin Zhang. Sara Majetich, and Mukund Bapna. Electric field switchable magnetic devices. US Patent 10,586,579 (2018) （美国授权专利，此专利已转让美国半导体联盟）
6. Jian-Ping Wang, Yanfeng Jiang, MD A Mehedi, Yiming Wu, Bin Ma, Jinming Liu and Delin Zhang. Iron nitride compositions. US Patent App. 16/423,516 (2018) （美国授权专利，此专利已转让美国Niron Magnetics, Inc.公司）
7. Jian-Ping Wang and Delin Zhang. Magnetic structures including FePd. US Patent 10,546,997 (2018) （美国授权专利，此专利已转让美国半导体联盟）
8. Yong Jiang, Jun Miao, Xin Zhang, Delin Zhang and Xiaoguang Xu. Electrical controlled magnetoresistance of the multiferroic spin valves structure and its construction approach. Chinese National Invention Patent. Under a legal checkup, 201010608783.3 dated 20. 07. 2011.
9. Yong Jiang, Delin Zhang, Jun Miao, Xin Zhang. Exchange bias effect in half-metallic/multiferroic multilayer and its construction approach, Chinese Patent. No ZL2010-1-0168882.4 dated 22. 09. 2010.
10. Xiaoguang Xu, Yong Jiang, Xiaoqi Li and Delin Zhang. Perpendicular magnetic anisotropy in multilayer film and its construction approach. Chinese Patent, No ZL2010-1-0119180.7 dated 05. 03. 2010.
代表性论文：
1. Delin Zhang*, Wei Jiang, Hwanhui Yun, et al., “Robust negative longitudinal magnetoresistance and spin–orbit torque in sputtered Pt3Sn and Pt3SnxFe1-x topological semimetal”, Nat. Communications 14, 4151 (2023) .
2. Ping Wang, Zheng Feng, Yuhe Yang, Delin Zhang*, Quancheng Liu, Zedong Xu, Zhiyan Jia, Yong Wu, Guoqiang Yu, Xiaoguang Xu and Yong Jiang*, “Inverse orbital Hall effect and orbitronic terahertz emission observed in the materials with weak spin-orbit coupling”, npj Quantum Mater. 8, 28 (2023).
3. Brandon R. Zink, Delin Zhang*, Hongshi Li, et al.,“Ultralow Current Switching of Synthetic-Antiferromagnetic Magnetic Tunnel Junctions Via Electric-Field Assisted by Spin–Orbit Torque”, Adv. Electron. Mater. 8, 2200382 (2022).
3. Delin Zhang, et al., “Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling”, Nano Letters. 22, 622-629 (2022).
4. Deyuan Lyu, Delin Zhang*, et al., “Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers”, Appl. Phys. Lett. 120, 012404 (2022).
5. Delin Zhang, et al., “60-GHz magnetic resonance through strain-spin coupling in perpendicular multilayers”, Science Advances 6, eabb4607 (2020).
6. Delin Zhang, et al., “L10 Fe-Pd synthetic antiferromagnet through an fcc Ru spacer utilized for perpendicular magnetic tunnel junctions”, Phys. Rev. Applied 9, 044028 (2018).
7. Delin Zhang, et al., “Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions”, Appl. Phys. Lett. 112, 152401 (2018) (Cover image, Featured article).
8. Delin Zhang*, et al., “Low damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films”, Appl. Phys. Lett. 117, 082405 (2020).
9. Delin Zhang, et al., “First-principles study of the structural stability of hexagonal, cubic and tetragonal phases of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds”, J. Phys.: Condens. Matter. 25, 206006(2013).
10. Yang Lv*, James Kally*, Delin Zhang*, et al., “Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures”, Nat. Communications 9, 111 (2018) (共一).
11. Protyush Sahu*, Delin Zhang*, et al., “Effects of mobile oxygen ions in top-gated synthetic antiferromagnet structure”, Appl. Phys. Lett. 117, 202405 (2020) (共一).
12. Dustin Lattery*, Delin Zhang*, et al., “Low Gilbert damping constant in perpendicularly magnetized W/CoFeB/MgO films with high thermal stability”, Sci. Rep. 8, 13395 (2018) (共一).
13. Mantao Huang, Muhammad Usama Hasan, Delin Zhang, et al., “Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures”, Nature Nanotechnology16, pages981-988(2021).
14. Yu-Ching Liao, Piyush Kumar, Mahendra DC, Xiang Li, Delin Zhang, et al., “Spin-Orbit-Torque Material Exploration for Maximum Array-Level Read/Write Performance”, IEEEInternational Electron Devices Meeting (IEDM), p13.6 (2020).
15. Mahendra DC, Mahdi Jamali, Jun-Yang Chen, Danielle Reifsnyder Hickey, Delin Zhang, et al., “Room-temperature high spin-orbit torque due to quantum confinement in sputtered BixSe(1–x) films”, Nature Materials 17, 800-807 (2018).
国际会议邀请报告：
1. Delin Zhang, “Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn andPt3SnxFe1-x topological semimetal” (Invited talk). The 68th Annual Conference on Magnetism and Magnetic Materials (MMM2023), 30 October-3 November 2023, Dallas, TX, USA.
2. Delin Zhang, “Perpendicular magnetic tunnel junctions for ultralow-energy spintronic devices” (Invited talk). The 10th IEEE International Symposium on Next-Generation Electronics (ISNE 2022), May 21st to 23rd, 2022, Wuxi, Jiangsu, China.
3. Delin Zhang, “Quantum materials for spintronic applications” (Invited talk). The International Meet on Magnetism and Magnetic Materials (MAGNETISMMEET2022), Tokyo, Japan, April 18-20, 2022.
4. Delin Zhang, “Perpendicular magnetic tunnel junctions for spin memory” (Invited talk). The Global Summit on Condensed Matter Physics (CONMAT2021) Valencia, Spain, October 18-20, 2021.
5. Delin Zhang, “Strain-spin coupling induced high-frequency magnetoacoustic resonance in perpendicular magnetic multilayers” (Invited talk). The 32nd The Magnetic Recording Conference (TMRC), August 16-19, 2021.
6. Delin Zhang, “Electric-field switching of perpendicular magnetic tunnel junctions for ultralow-energy spintronic memory devices” (Invited talk). The 31st The Magnetic Recording Conference (TMRC), Berkeley, CA, August 17-20, 2020.
7. Delin Zhang, “Bulk perpendicular L10-FePd spintronic devices for ultralow-energy spin memory and computing applications” (Invited talk), 2019 Joint MMM-INTERMAG, Washington, DC, January 14-18, 2019.
8. Delin Zhang, “L10-FePd fully perpendicular magnetic tunnel junctions for spintronic application” (Invited poster), IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, December 3-7, 2018.
9. Delin Zhang, “L10-phase FePd fully perpendicular magnetic tunnel junctions for STT-MRAM application” (Invited talk). The 29th The Magnetic Recording Conference (TMRC), Milpitas, CA, August 8-10, 2018.
10. Delin Zhang, “Development of perpendicular magnetic tunnel junctions with FePd free layer for memory and logic applications”. Special joint poster session on MRAM (totally 30 posters), IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, December 3-7, 2016.
