姓名：陈杰
性别：男
职称：讲师
Email: chenjie@tiangong.edu.cn
专业：电子科学与技术
研究方向一：磁性拓扑材料
研究方向二：half-Heusler合金磁电输运物性研究
学习经历：
2017/09-2020/06，中国科学院大学，中科院物理研究所，凝聚态物理，博士
2014/09-2017/06，北京工业大学，材料科学与工程学院，材料科学与工程，硕士
2010/09-2014/06，河南工业大学，材料科学与工程学院，无机非金属，学士
工作经历：
2022/09-至今，天津工业大学，电子与信息工程学院，讲师
2020/08-2022/08，中科院物理所和松山湖材料实验室联合培养，博士后
科研项目：
1.中国博士后科学基金, 面上资助, 2020M680734, 稀土基half-Heusler合金的反常霍尔效应研究, 2020-08 至 2022-08, 8万元, 主持
2.国家自然科学基金委员会, 国际(地区)合作与交流项目, 52161135108, 多功能half-Heusler合金的可控制备和拓扑量子物性调控研究, 2022-01-01 至 2024-12-31, 150万元, 参与
3.国家自然科学基金委员会, 面上项目, 11974406, 稀土-过渡金属半Heusler合金反常磁阻效应及其物理机制研究, 2020-01-01 至 2023-12-31, 63万元, 参与
4.国家自然科学基金委员会, 重点项目, 51831003, 基于晶体长/短程序和磁性团簇拓扑关联及外场调控的新型磁驱相变材料研究, 2019-01-01 至 2023-12-31, 300万元,参与
代表性论文：现已发表一作论文9篇，合作发表论文20余篇
1.Jie Chen; Hang Li; Bei Ding; Peng Chen; Tengyu Guo; Xing Xu; Dongfeng Zheng; Hongwei Zhang; Xuekui Xi; Wenhong Wang; Unconventional Anomalous Hall Effect in the Canted Antiferromagnetic Half-Heusler Compound DyPtBi, Advanced Functional Materials, 2021, 31(41): 2107526
2.Jie Chen; Hang Li; Tengyu Guo; Peng Chen; Dongfeng Zheng;Guoqiang Yu; Yong-Chang Lau; Xuekui Xi; Wenhong Wang; Anomalous anisotropic magnetoresistance in the topological semimetal HoPtBi, NPG Aisa Materials, 2023, (accept)
3.Jie Chen; Xing Xu; Hang Li; Tengyu Guo; Bei Ding; Peng Chen; Hongwei Zhang; Xuekui Xi; Wenhong Wang; Large anomalous Hall angle accompanying the sign change of anomalous Hall conductance in the topological half-Heusler compound HoPtBi, Physical Review B, 2021, 103(14): 144425
4. Jie Chen; Hang Li; Bei Ding; Zhipeng Hou; Enke Liu; Xuekui Xi; Hongwei Zhang; Guangheng Wu; Wenhong Wang; Structural and magnetotransport properties of topological trivial LuNiBi single crystals, Journal of Alloys and Compounds, 2019, 784: 822-826
5. Jie Chen; Hang Li; Bei Ding; Hongwei Zhang; Enke Liu; Wenhong Wang ; Large anomalous Hallangle in a topological semimetal candidate TbPtBi, Applied Physics Letters, 2021, 118(3): 031901
6. Jie Chen; Hang Li; Bei Ding; Enke Liu; Yuan Yao; Guangheng Wu; Wenhong Wang; Chiral-anom aly induced large negative magnetoresistance and nontrivial π-Berry phase in half-Heusler compounds RPtBi (R=Tb, Ho, and Er), Applied Physics Letters, 2020, 116(22): 222403
7. Jie Chen; Hang Li; Bei Ding; Zhipeng Hou; Enke Liu; Xuekui Xi; Guangheng Wu; Wenhong Wang; Tunable positive magnetoresistance and crossover from weak antilocalization to weak localization transition in half-Heusler compounds RPtBi (R = lanthanide), Applied Physics Letters, 2020, 116(10): 101902
8. Jie Chen; Peng Chen; Tengyu Guo; Dongfeng Zheng; Hang Li; Guoqiang Yu; Yong-Chang Lau; Xuekui Xi; Wenhong Wang;; Tunable positive magnetoresistance and crossover from weak antilocalization to weak localization transition in half-Heusler compounds RPtBi (R = lanthanide), Applied Physics Letters, 2023, (accept)
9. Jie Chen; Hongguo Zhang; Enke Liu; Ming Yue; Qingmei Lu; Wenhong Wang; Guangheng Wu; Jiuxing Zhang;Wide temperature window of magnetostructural transition achieved in Mn0.4Fe0.6NiSi1−xGax by a two-step isostructural alloy, AIP advances, 2016, 6(5): 056220
