姓名：解媛
职称：副教授
Email：xieyuan@tiangong.edu.cn
研究方向：新型微纳传感器、感算一体器件
教育经历：
2018-2021年，天津大学 仪器科学与技术 博士
2016-2018年，天津大学 仪器科学与技术 硕士
2012-2016年，合肥工业大学 测控技术与仪器 学士
工作经历：
2021年7月-至今，天津工业大学，电子与信息工程学院
讲授主要课程：
模拟电子技术基础，电子设备热设计及分析技术，文献检索与科技论文写作
科研项目：
[1] 国家自然科学基金委员会, 青年项目, 62304151, 2024-01-01 至2026-12-31, 30 万元, 在研, 主持
[2] 天津市自然科学基金青年基金，24JCQNJC00520，2024-10-01 至2026-09-31, 6 万元, 在研, 主持
[3] 南京大学固体微结构物理国家重点实验室开放课题, M36019，2023-06-01 至2025-05-30, 3 万元, 已结题, 主持
[4] 国家自然科学基金委员会, 面上项目, 82272428, 2023-01-01 至2026-12-31, 52 万元, 在研, 参与
[5] 国家自然科学基金委员会, 面上项目, 52075385, 2021-01-01 至2024-12-31, 60万元, 已结题, 参与
发表论文：
[1] Liu B, Gao Q, Wang Y, Xie Y*, et al. Oxygen Plasma–Assisted Bipolar Doping of WSe2 for Reinforcement Learning Synaptic Devices[J]. ACS Applied Materials & Interfaces, 2026. https://doi.org/10.1021/acsami.6c02267
[2] Xie Y, Zhang A, Wang G, et al. Plasma engineering of two-dimensional transition metal dichalcogenides: From material synthesis to functional device integration. Nano Research, 2025, 18(11): 94907853. https://doi.org/10.26599/NR.2025.94907853
[3] Yang Z, Huo S, Zhang Z, Xie Y*, et al. High‐precision multibit opto‐electronic synapses based on ReS2/h‐BN/graphene heterostructure for energy‐efficient and high‐accuracy neuromorphic computing[J]. Advanced Functional Materials, 2025, 35(48): 2509119.
[4] Wu E, Wang Y, Huo S, Xie Y*, et al. Universal Core–Shell Nanowire Memristor Platform with Quasi‐2D Filament Confinement for Scalable Neuromorphic Applications[J]. Advanced Functional Materials, 2025: e18764.
[5] Zhang Z, Tian Q, Huo S, Xie Y, et al. Photodoping strategies in two‐dimensional semiconductors: Mechanisms, characterizations, and emerging applications[J]. InfoMat, 2025, 7(12): e70092.
[6] Yuan Xie, Zhe Zhang, Fanying Meng, Shida Huo, Xiaodong Hu, Pingjuan Niu, Enxiu Wu. Strategies and challenges for improving the performance of two-dimensional materials-based gas sensors. Advances in Physics: X, 2024, 9(1): 2288353.
[7] Yuan Xie, Zhe Zhang, Fanying Meng, Shida Huo, Xiaodong Hu, Pingjuan Niu, Enxiu Wu. Anisotropic sensing based on single ReS2 flake for VOCs discrimination[J]. Nanotechnology, 2024, 35(30): 305203.
[8] Yuan Xie, Enxiu Wu, Guangyu Geng, Daihua Zhang, Xiaodong Hu, Jing Liu. Gate-Tunable van der Waals Heterostructure based on semimetallic WTe2 and semiconducting MoTe2. Applied Physics Letters, 2021, 118(13), 133103.
[9] Yuan Xie, Enxiu Wu, Jing Zhang, Xiaodong Hu, Daihua Zhang and Jing Liu. Gate-Tunable Photodetection/Voltaic Device Based on BP/MoTe2 Heterostructure. ACS Applied Materials and Interfaces, 2019, 11(15): 14215–14221.
[10] Enxiu Wu#, Yuan Xie#, Jing Zhang, Hao Zhang, Xiaodong Hu, Jing Liu, Chongwu Zhou, Daihua Zhang. Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation. Science Advances, 2019, 5, 1-9.
